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MMBTSC3356W
NPN Silicon Epitaxial Planar Transistor
for microwave low noise amplifier at VHF, UHF and CATV band.
The transistor is subdivided into three groups, Q, R and S, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 20 12 3 100 200 150 - 65 to + 150 Unit V V V mA mW
O
C C
O
Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 20 mA Current Gain Group Q R S Symbol hFE hFE hFE ICBO IEBO fT Cre
1)
Min. 50 80 125 -
Typ. 7 0.55 11.5 1.1
Max. 100 160 250 1 1 1 2
Unit A A GHz pF dB dB
Collector Cutoff Current at VCB = 10 V Emitter Cutoff Current at VEB = 1 V Gain Bandwidth Product at VCE = 10 V, IC = 20 mA Feed-Back Capacitance at VCB = 10 V, f = 1 MHz Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz
1)
S21e NF
2
-
The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/05/2006
MMBTSC3356W
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/05/2006

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